半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
1期
58-62
,共5页
锗硅异质结双极晶体管%多晶发射极%特征频率%双层多晶硅
鍺硅異質結雙極晶體管%多晶髮射極%特徵頻率%雙層多晶硅
타규이질결쌍겁정체관%다정발사겁%특정빈솔%쌍층다정규
SiGe HBT%polycrystalline emitter%characteristic frequency%double-poly silicon
研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析.给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1 500,最大达到3 000,V_(ceo)为5 V,厄利电压V_A大于10 V,βV_A乘积达到15 000 以上.这种器件对多晶Si发射极As杂质浓度分布十分敏感.
研製瞭一種平麵集成多晶髮射極SiGe HBT,併對SiGe HBT設計進行瞭研究分析.給齣瞭雙極晶體管的結構和關鍵工藝參數,併進行瞭流片測試,結果錶明,在室溫下電流增益β大于1 500,最大達到3 000,V_(ceo)為5 V,阨利電壓V_A大于10 V,βV_A乘積達到15 000 以上.這種器件對多晶Si髮射極As雜質濃度分佈十分敏感.
연제료일충평면집성다정발사겁SiGe HBT,병대SiGe HBT설계진행료연구분석.급출료쌍겁정체관적결구화관건공예삼수,병진행료류편측시,결과표명,재실온하전류증익β대우1 500,최대체도3 000,V_(ceo)위5 V,액리전압V_A대우10 V,βV_A승적체도15 000 이상.저충기건대다정Si발사겁As잡질농도분포십분민감.
A planar integrated emitter polycrystalline silicon-germanium heterojunction bipolar transistor was developed. The design of SiGe HBT was carried out and analyzed. The bipolar transistor structure and key process parameters were studied and analyzed, and finally the tape out was tested. The results show that at room temperature current gain β is greater than 1 500, and the greatest is up to 3 000, V_(ceo) is 5 V,Overly-vohage V_A is greater than 10 V, βV_A product reaches more than 15 000. This device is very sensitive to the arsenic impurity concentration distribution of polysilieon emitter.
