CAJ | 학술논문

为了揭示微通道板电压的变化对微光像增强器信噪比的影响,进一步优化像增强器的性能,分别测试出超二代和三代微光像增强器的信噪比随微通道板的电压变化曲线,前者在微通道板电压为600 V～800 V时,信噪比单调增加到25.9,在800 V～900 V时,信噪比在25上下震荡并呈下降趋势,在900 V～1 000 V时,迅速下降到21.8;而后者当MCP电压在800 V～1 000 V时,单调增加到27.87,在800 V～1 180 V时,则在26.61～28.66之间震荡.通过对微通道板噪声因子的理论分析,指出进一步降低微通道板噪声因子,改善微光像增强器信噪比的方法.
위료게시미통도판전압적변화대미광상증강기신조비적영향,진일보우화상증강기적성능,분별측시출초이대화삼대미광상증강기적신조비수미통도판적전압변화곡선,전자재미통도판전압위600 V～800 V시,신조비단조증가도25.9,재800 V～900 V시,신조비재25상하진탕병정하강추세,재900 V～1 000 V시,신속하강도21.8;이후자당MCP전압재800 V～1 000 V시,단조증가도27.87,재800 V～1 180 V시,칙재26.61～28.66지간진탕.통과대미통도판조성인자적이론분석,지출진일보강저미통도판조성인자,개선미광상증강기신조비적방법.
In order to reveal the influence of the voltage variation of microchannel plate on the signal-to-noise ratio of LLL image intensifier and optimize the performance of the image intensifier, the curves that the signal-to-noise ratio of super Gen II and Gen III image intensifiers variates with the voltage of a microchannel plate were obtained by the aid of a signal-to-noise ratio tester. As for the super Gen II image intensifier, when the microchannel plate's voltage is in the range of 600～800 V, the signal-to-noise ratio is monotonically increased to 25.9, when it is in the range of 800～900 V, the ratio is 25 or so and has downtrend, and when 900～1 000 V, the ratio is rapidly decreased to 21.8. As for the Gen III image intensifier, when the microchannel plate's voltage is in the range of 800～1 000 V, the signal-to-noise ratio is monotonically increased to 27.87, and when the voltage is in 1 000～11 800 V, the ratio fluctuates from 26.61 to 28.66.In combination with the theoretical analysis of microchannel plate's noise factor, a method to reduce the noise factor of microchannel plates and improve the signal-to-noise ratio of LLL image intensifiers is proposed.