半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2009年
8期
780-782
,共3页
徐会武%牛江丽%任永晓%王伟
徐會武%牛江麗%任永曉%王偉
서회무%우강려%임영효%왕위
半导体激光器%攀爬%复合焊料%成品率%电光参数
半導體激光器%攀爬%複閤銲料%成品率%電光參數
반도체격광기%반파%복합한료%성품솔%전광삼수
semiconductor laser diode%climbing%composite solder%yield%electric-optic parameter EEACC: 2550F%4300
大功率半导体激光器封装过程中,为降低封装引入的应力,踊般用In焊料进行焊接.In焊料具有易氧化、易"攀爬"的特性,因而导致封装成品率很低.提出了一种新型焊料--In-Au复合焊料,使用此焊料进行封装,很好地解决了上述问题.通过理论分析及实验摸索,确定了In-Au复合焊料蒸发条件,分别利用纯In焊料和In-Au复合焊料封装了一批激光器样品,通过对比这两组样品的焊料浸润性、电光参数、剪切强度等,发现利用In-Au复合焊料封装的样品优于纯In焊料封装的样品.
大功率半導體激光器封裝過程中,為降低封裝引入的應力,踴般用In銲料進行銲接.In銲料具有易氧化、易"攀爬"的特性,因而導緻封裝成品率很低.提齣瞭一種新型銲料--In-Au複閤銲料,使用此銲料進行封裝,很好地解決瞭上述問題.通過理論分析及實驗摸索,確定瞭In-Au複閤銲料蒸髮條件,分彆利用純In銲料和In-Au複閤銲料封裝瞭一批激光器樣品,通過對比這兩組樣品的銲料浸潤性、電光參數、剪切彊度等,髮現利用In-Au複閤銲料封裝的樣品優于純In銲料封裝的樣品.
대공솔반도체격광기봉장과정중,위강저봉장인입적응력,용반용In한료진행한접.In한료구유역양화、역"반파"적특성,인이도치봉장성품솔흔저.제출료일충신형한료--In-Au복합한료,사용차한료진행봉장,흔호지해결료상술문제.통과이론분석급실험모색,학정료In-Au복합한료증발조건,분별이용순In한료화In-Au복합한료봉장료일비격광기양품,통과대비저량조양품적한료침윤성、전광삼수、전절강도등,발현이용In-Au복합한료봉장적양품우우순In한료봉장적양품.
To reduce packaging stress, In solder is often used in high power semiconductor laser diode packaging process. But In solder is easy to be oxidized and easy to "climb", so the product yield is very low. A new solder was introduced, In-Au composite solder, the issue above was solved by this solder. The parameter of vapor was confirmed with the help of theory analyzing and testing. A batch of LD samples were packaged using pure In solder and In-Au composite solder separately, by comparing soldering wetting, electric-optic parameter, shear intensity etc. It is proved that the sample using In-Au composite solder is preceding than that using pure In solder.