CAJ | 학술논문

通过金属催化化学气相沉积法,采用四氯化硅作为硅源合成了棒状氧化硅纳米结构.对产物进行了场发射扫描电镜、透射电镜及附带X射线能谱仪的表征测试.生长工艺条件包括沉积位置、反应时间、氩气冲洗次数和基板对产物纳米结构的影响进行了探讨,其中前三者分别影响气相硅源的浓度、获取硅源的量和残余氧的浓度,而基板的成分和表面粗糙度对纳米结构的生长影响显著.
통과금속최화화학기상침적법,채용사록화규작위규원합성료봉상양화규납미결구.대산물진행료장발사소묘전경、투사전경급부대X사선능보의적표정측시.생장공예조건포괄침적위치、반응시간、아기충세차수화기판대산물납미결구적영향진행료탐토,기중전삼자분별영향기상규원적농도、획취규원적량화잔여양적농도,이기판적성분화표면조조도대납미결구적생장영향현저.
Rod-like silicon oxide nanostructures were grown via metal-catalyzed chemical vapor deposition method,using SiCl4 as Si source.The nanostructures were examined using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) equipped with energy dispersive X-ray spectroscopy (EDX).The synthesis conditions including deposition location,reaction time,Ar-flushing times,and substrate on the growth of the nanostructures were investigated.The results show that the deposition location,reaction time and Ar-flushing times affect the concentration of Si vapor,quantities of obtained Si species and concentration of residual oxygen,respectively.The composition and surface roughness of the substrates significantly affect the growth of nanostructures.