CAJ | 학술논문

利用KrF准分子激光对非晶硅薄膜的表层进行了晶化.研究了激光能量密度和照射脉冲数对薄膜结晶度的影响,并对晶化后薄膜的形貌和结构进行了表征.结果表明:该非晶硅薄膜晶化阈值约为110 mJ/cm2,且不受照射脉冲数的影响;激光能量密度是影响薄膜结晶度的首要因素,但在较低的能量密度时,增加照射脉冲数也会显著的提高薄膜结晶度;结构及形貌表征发现,薄膜晶化层厚度约为400～500 nm,平均晶粒尺寸为30～50 nm.
이용KrF준분자격광대비정규박막적표층진행료정화.연구료격광능량밀도화조사맥충수대박막결정도적영향,병대정화후박막적형모화결구진행료표정.결과표명:해비정규박막정화역치약위110 mJ/cm2,차불수조사맥충수적영향;격광능량밀도시영향박막결정도적수요인소,단재교저적능량밀도시,증가조사맥충수야회현저적제고박막결정도;결구급형모표정발현,박막정화층후도약위400～500 nm,평균정립척촌위30～50 nm.
KrF excimer laser was applied to the crystallization of the surface layer of amorphous silicon (a-Si) thin fdms.The influences of laser fluence and frequency of irradiation on the film crystallinity were investigated and the structure and morphology after crystallization were characterized.The results indicated that the laser crystallization threshold of the as-deposit a-Si films is near 110mJ/cm2 and independent of the frequency of irradiation.The laser fluence is the predominant influencing foctor on film crystallinity,though increasing the frequency of irradiation can also improve the crystallinity efficiently when laser fluence is low.It was found that the fdm after crystallization is of μc-Si/a-Si double-layer structure,of which the crystallized layer is 400～500nm thick with mean crystal grain size 30～50nm.