材料导报
材料導報
재료도보
MATERIALS REVIEW
2009年
23期
30-33
,共4页
刘本锋%赵青南%潘震%冯敏鸽
劉本鋒%趙青南%潘震%馮敏鴿
류본봉%조청남%반진%풍민합
纳米硅%薄膜%磁控溅射
納米硅%薄膜%磁控濺射
납미규%박막%자공천사
nanocrystalline silicon%thin films%magnetron sputtering
纳米硅薄膜具有卓越的光学和电学特性,其在光电器件方面潜在的应用越来越引起人们的兴趣.讨论了用磁控溅射法制备纳米硅薄膜的微观机理及沉积参数对薄膜结构和性能的影响.其中,氢气分压、基片温度、溅射功率是磁控溅射法沉积纳米硅的关键参数,适当的温度、较高的氢气分压和较低的溅射功率有利于纳米硅的生成.
納米硅薄膜具有卓越的光學和電學特性,其在光電器件方麵潛在的應用越來越引起人們的興趣.討論瞭用磁控濺射法製備納米硅薄膜的微觀機理及沉積參數對薄膜結構和性能的影響.其中,氫氣分壓、基片溫度、濺射功率是磁控濺射法沉積納米硅的關鍵參數,適噹的溫度、較高的氫氣分壓和較低的濺射功率有利于納米硅的生成.
납미규박막구유탁월적광학화전학특성,기재광전기건방면잠재적응용월래월인기인문적흥취.토론료용자공천사법제비납미규박막적미관궤리급침적삼수대박막결구화성능적영향.기중,경기분압、기편온도、천사공솔시자공천사법침적납미규적관건삼수,괄당적온도、교고적경기분압화교저적천사공솔유리우납미규적생성.
Nanocrystalline silicon thin films become a hot subject for the excellent optical,electronic characteris-tics and potential application in photoelectric devices. The mechanism of the growth of nanocrystalline silicon thin films prepared by magnetron sputtering are discussed and the structure and characteristic of the films influenced by dif-ferent deposition parameters are analyzed respectively. On the basis of the discussion, it can be concluded that hydro-gen pressure, substrate temperature and sputtering power are the key parameters. The nanocrystalline phase will be propitious to appear at proper suhstrate temperature, high hydrogen pressure and comparatively low sputtering power.