CAJ | 학술논문

根据SiGe材料的物理特性,提出了一种新有源层材料的三维CMOS集成电路.该三维CMOS集成电路前序有源层仍采用Si材料,制作nMOS器件;后序有源层则采用SiGe材料,以制作pMOS器件.这样,电路的本征性能将由Si nMOS决定.使用MEDICI软件对Si-SiGe材料三维CMOS器件及Si-SiGe三维CMOS反相器的电学特性分别进行了模拟分析.模拟结果表明,与Si-Si三维CMOS结构相比,文中提出的Si-SiGe材料三维CMOS集成电路结构具有明显的速度优势.
근거SiGe재료적물리특성,제출료일충신유원층재료적삼유CMOS집성전로.해삼유CMOS집성전로전서유원층잉채용Si재료,제작nMOS기건;후서유원층칙채용SiGe재료,이제작pMOS기건.저양,전로적본정성능장유Si nMOS결정.사용MEDICI연건대Si-SiGe재료삼유CMOS기건급Si-SiGe삼유CMOS반상기적전학특성분별진행료모의분석.모의결과표명,여Si-Si삼유CMOS결구상비,문중제출적Si-SiGe재료삼유CMOS집성전로결구구유명현적속도우세.
Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2～3ps,which is shorter than that of the 3D Si-Si CMOS inverter.