发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2010年
1期
91-95
,共5页
张延召%秦志新%桑立雯%许正昱%于涛%杨子文%沈波%张国义%赵岚%张向锋%成彩晶%孙维国
張延召%秦誌新%桑立雯%許正昱%于濤%楊子文%瀋波%張國義%趙嵐%張嚮鋒%成綵晶%孫維國
장연소%진지신%상립문%허정욱%우도%양자문%침파%장국의%조람%장향봉%성채정%손유국
p-Al_xGa_(1-x)N%In气氛%激活能%深紫外LED
p-Al_xGa_(1-x)N%In氣氛%激活能%深紫外LED
p-Al_xGa_(1-x)N%In기분%격활능%심자외LED
p-type Al_xGa_(1-x)N%In-ambient%activation energy%ultraviolet light-emitting diodes
Ⅲ-Ⅴ族氮化物宽禁带半导体材料体系中,普通方法生长的p型外延层电导率一般都很低,成为了制约器件性能提高的瓶颈.在p-Al_xGa_(1-x)N材料中,Mg受主的激活能较大,并且随Al组份增加而增大.通过在p-Al_xGa_(1-x)N材料生长过程中引入三甲基铟(TMIn),发现能有效地降低Al_xGa_(1-x)N材料中受主态的激活能.为研究不同In气氛下生长的p-Al_xGa_(1-x)N材料的性质,在使用相同二茂基镁(CP2Mg)的情况下,改变TMIn流量,生长了A,B,C和D四块样品.X射线衍射(XRD)组份分析表明:在1 100 ℃下生长Al_xGa_(1-x)N外延层时,In的引入不会影响晶体组份.利用变温霍尔(Hall)测试研究了p-Al_xGa_(1-x)N材料中受主的激活能,结果表明:In气氛下生长的外延层相比无In气氛下生长的外延层,受主激活能明显降低,电导率显著提高.采用这种方法改进深紫外发光二极管(LED)的p-Al_xGa_(1-x)N层后,LED器件性能明显提高.
Ⅲ-Ⅴ族氮化物寬禁帶半導體材料體繫中,普通方法生長的p型外延層電導率一般都很低,成為瞭製約器件性能提高的瓶頸.在p-Al_xGa_(1-x)N材料中,Mg受主的激活能較大,併且隨Al組份增加而增大.通過在p-Al_xGa_(1-x)N材料生長過程中引入三甲基銦(TMIn),髮現能有效地降低Al_xGa_(1-x)N材料中受主態的激活能.為研究不同In氣氛下生長的p-Al_xGa_(1-x)N材料的性質,在使用相同二茂基鎂(CP2Mg)的情況下,改變TMIn流量,生長瞭A,B,C和D四塊樣品.X射線衍射(XRD)組份分析錶明:在1 100 ℃下生長Al_xGa_(1-x)N外延層時,In的引入不會影響晶體組份.利用變溫霍爾(Hall)測試研究瞭p-Al_xGa_(1-x)N材料中受主的激活能,結果錶明:In氣氛下生長的外延層相比無In氣氛下生長的外延層,受主激活能明顯降低,電導率顯著提高.採用這種方法改進深紫外髮光二極管(LED)的p-Al_xGa_(1-x)N層後,LED器件性能明顯提高.
Ⅲ-Ⅴ족담화물관금대반도체재료체계중,보통방법생장적p형외연층전도솔일반도흔저,성위료제약기건성능제고적병경.재p-Al_xGa_(1-x)N재료중,Mg수주적격활능교대,병차수Al조빈증가이증대.통과재p-Al_xGa_(1-x)N재료생장과정중인입삼갑기인(TMIn),발현능유효지강저Al_xGa_(1-x)N재료중수주태적격활능.위연구불동In기분하생장적p-Al_xGa_(1-x)N재료적성질,재사용상동이무기미(CP2Mg)적정황하,개변TMIn류량,생장료A,B,C화D사괴양품.X사선연사(XRD)조빈분석표명:재1 100 ℃하생장Al_xGa_(1-x)N외연층시,In적인입불회영향정체조빈.이용변온곽이(Hall)측시연구료p-Al_xGa_(1-x)N재료중수주적격활능,결과표명:In기분하생장적외연층상비무In기분하생장적외연층,수주격활능명현강저,전도솔현저제고.채용저충방법개진심자외발광이겁관(LED)적p-Al_xGa_(1-x)N층후,LED기건성능명현제고.
Influence of Indium doping on acceptor activation energy in p-type Al_xGa_(1-x)N was presented. The p-type Al_xGa_(1-x)N epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD). TMIn flow rate is varied as 0, 40, 80 and 120 sccm while keeping other growth conditions changeless. X-ray diffraction (XRD) was used to determine the crystalline quality and Al composition in Al_xGa_(1-x)N epilayers. At room temperature, the resistivity of p-type Al_(0.43)Ga_(0.57)N epilayer grown In doping is in order of 10~4 Ωcm, but that grown without In is above 1×10~6 Ωcm. Variable temperature Hall-effect measurements were employed to determine the acceptor activation energy in p-type Al_(0.43)Ga_(0.57)N epilayers. It was seen that the acceptor activation energy decreases significantly with the introduction of In. The minimum of 259 meV is obtained at TMIn flow rate of 80 sccm. It was suggested that acceptor-donor-acceptor (A-D-A) complexes could be formed in p-type Al_(0.43)Ga_(0.57)N epilayers. The formation of A-D-A complexes would decrease the acceptor activation energy in p-type Al_(0.43)Ga_(0.57)N epilayers due to lower activation energy for A-D-A complexes. In order to verify the influence of the In-ambient on acceptor activation energy, the ultraviolet light-emitting diodes (UV-LEDs) were fabricated. It was seen that there are a lower turn-on voltage and a lower diode series resistance for the UV-LEDs fabricated with p-type Al_(0.43)Ga_(0.57)N grown under In-doping, compared with that without In-ambient.
