CAJ | 학술논문

使用波长351 nm的半导体泵浦全固态脉冲激光器作为光源,经过位相光栅分束,形成干涉光场,在硅表面直接刻蚀微结构,制作了周期为0.55 μm,槽深可达55 nm的一维微光栅和周期为1.25 μm,刻蚀深度45 nm的正交微光栅结构.给出了微光栅形貌结构的扫描电子显微镜和原子力显微镜的测量结果.正交微光栅的一级衍射效率在1.8%～6.3%之间.该研究是改变硅表面微结构,优化硅材料特性的一种新方法,并扩展了大功率激光刻蚀在表面微加工领域的应用.
사용파장351 nm적반도체빙포전고태맥충격광기작위광원,경과위상광책분속,형성간섭광장,재규표면직접각식미결구,제작료주기위0.55 μm,조심가체55 nm적일유미광책화주기위1.25 μm,각식심도45 nm적정교미광책결구.급출료미광책형모결구적소묘전자현미경화원자력현미경적측량결과.정교미광책적일급연사효솔재1.8%～6.3%지간.해연구시개변규표면미결구,우화규재료특성적일충신방법,병확전료대공솔격광각식재표면미가공영역적응용.
The micro-grating structures (MGSs) were fabricated by ablation directly on the silicon wafers using the interference laser of 351 nm diode-pumped solid-state laser (DPSSL) pulses. The measuring result of atomic force microscopy (AFM) and scanning electron microscope (SEM) were carried out. The depth of grooves could be 55 nm for one-dimensional micro-grating and 45 nm for cross MSGs, while the period of MGSs were 1. 25 μm and 0. 55 μm, respectively. And the first-order diffraction efficiency of the two-dimensional cross MSGs varies between 1. 8% and 6. 3%. This research is about introducing a novel method for changing the microstructure on the surface of silicon and optimizing the photoelectric peculiarity of it. And it extends the application of high power laser ablation in the field of micromachining as well.