CAJ | 학술논문

用改进溶胶-凝胶法在Pt/Ti/SiO_2/Si上制备了钇(Y)掺杂Ba_0.6Sr_0.4TiO_3 (BST)薄膜,研究了Y掺杂对BST薄膜表面结构和介电性能的影响.XPS结果表明,Y掺杂有利于薄膜钙钛矿结构的形成,但对氧空位没有明显的抑制作用.SEM和AFM结果表明,Y掺杂能缓解薄膜应力、减少薄膜裂纹、细化晶粒,进而改善薄膜的表面结构.在进行Y掺杂后,薄膜的介电性能得到明显提高,40 V外加电压下的介电调谐率大于40%及零偏压下介电损耗为0.0210,优化因子大于20.
용개진용효-응효법재Pt/Ti/SiO_2/Si상제비료을(Y)참잡Ba_0.6Sr_0.4TiO_3 (BST)박막,연구료Y참잡대BST박막표면결구화개전성능적영향.XPS결과표명,Y참잡유리우박막개태광결구적형성,단대양공위몰유명현적억제작용.SEM화AFM결과표명,Y참잡능완해박막응력、감소박막렬문、세화정립,진이개선박막적표면결구.재진행Y참잡후,박막적개전성능득도명현제고,40 V외가전압하적개전조해솔대우40%급령편압하개전손모위0.0210,우화인자대우20.
Yttrium (Y)-doped Ba_0.6Sr_0.4TiO_3 (BST) films were prepared on Pt/Ti/SiO_2/Si by improved Sol-gel method. The surface structure and dielectric properties of the BST films were investigated. X-ray photoelectron spectrum shows that the surface structures of Y-doped BST films are composed of perovskite structure and non-perovskite structure, and Y doping is helpful to increase the amount of perovskite structure, but is not so obvious to reduce oxygen vacancies. Scanning electron microscope and atomic force microscope exhibit that Y doping is beneficial to reduce stress and cracks, make crystal size smaller, and thus improve film surface structure. Also, Y doping markedly improves film dielectric properties with more than 40% tunability at 40 V, about 0.0210 dielectric loss (tand) at zero bias and hence merit value more than 20 figure.