CAJ | 학술논문

采用单槽电化学腐蚀法在预置有倒金字塔结构的n型单晶硅上制备用于二维光子晶体的多孔硅。利用基于LabVIEW的虚拟仪器技术对实验仪器编程，搭建实时测控系统，实现对反应过程中所需电源的控制，并且实时显示采集到的随时间变化的电压和电流信号，将采集的数据存储在计算机里。实验表明，恒电流供电模式下致使电压剧烈变动，导致多孔硅侧向腐蚀严重，然而，恒电压供电模式下，能够有效地抑制侧向腐蚀。
채용단조전화학부식법재예치유도금자탑결구적n형단정규상제비용우이유광자정체적다공규。이용기우LabVIEW적허의의기기술대실험의기편정，탑건실시측공계통，실현대반응과정중소수전원적공제，병차실시현시채집도적수시간변화적전압화전류신호，장채집적수거존저재계산궤리。실험표명，항전류공전모식하치사전압극렬변동，도치다공규측향부식엄중，연이，항전압공전모식하，능구유효지억제측향부식。
Porous silicon for 2D photonic crystal is fabricated by the electrochemical etching method on a patterned monocrystalline silicon substrate immersed into a single-cell with HF solution and illuminated by a halogen lamp. The programmable instrument used in the investigation was interfaced with a computer and communicated by LabVIEW. The variation of the voltage or current between sample（cathode） and platinum（anode） can be surveyed and the data can be memorized in the computer by a program in-situ during the procedure of porous silicon formation performed by a constant-current/voltage supplier. The experimental results demonstrated that the voltage under constant-current condition was frequently changed and generated severe lateral erosion. However, the lateral erosion can be suppressed by the constant-voltage supplier.