固体电子学研究与进展
固體電子學研究與進展
고체전자학연구여진전
RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS
2010年
1期
155-158
,共4页
T-TOP%泡显影液%剥离
T-TOP%泡顯影液%剝離
T-TOP%포현영액%박리
T-TOP%soak in the developer%lift-off
介绍的泡显影液法T-TOP剥离工艺,是一种简单的金属剥离方式,它在普通光刻工艺流程中加入浸泡显影液环节,通过调节烘烤温度,制作出利于剥离的T型胶剖面,并配合正确的剥离操作,最终实现完好的金属互联.该方法相对来说,工艺简单、易于操作、经济实用.
介紹的泡顯影液法T-TOP剝離工藝,是一種簡單的金屬剝離方式,它在普通光刻工藝流程中加入浸泡顯影液環節,通過調節烘烤溫度,製作齣利于剝離的T型膠剖麵,併配閤正確的剝離操作,最終實現完好的金屬互聯.該方法相對來說,工藝簡單、易于操作、經濟實用.
개소적포현영액법T-TOP박리공예,시일충간단적금속박리방식,타재보통광각공예류정중가입침포현영액배절,통과조절홍고온도,제작출리우박리적T형효부면,병배합정학적박리조작,최종실현완호적금속호련.해방법상대래설,공예간단、역우조작、경제실용.
This paper describes a T-TOP lift-off process by soaking wafer in the developer which is a simple way of metal lift-off, only one more step of soaking than general lithography process. By optimizing the bake temperature,and obtaining the T type PR profile, as well as operating correctly when lifting-off,we can realize perfect metal connecting.This simple process can be easily operated and does not cost too much.
