CAJ | 학술논문

设计并优化了一种用808 nm的大功率激光二极管为抽运光源,In_(0.09)Ga_(0.91)As量子阱结构为增益介质的920 nm光抽运半导体垂直外腔面发射激光器.运用有限元方法,对激光器的电特性方程和光特性方程求自洽解,计算了器件各种特性参量.分析了单个周期内不同阱的个数(1,2和3)、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下,器件性能的改变,特别是模式、阈值和光-光转换效率的改变,从而选择一个最佳的结构.
설계병우화료일충용808 nm적대공솔격광이겁관위추운광원,In_(0.09)Ga_(0.91)As양자정결구위증익개질적920 nm광추운반도체수직외강면발사격광기.운용유한원방법,대격광기적전특성방정화광특성방정구자흡해,계산료기건각충특성삼량.분석료단개주기내불동정적개수(1,2화3)、불동정심、불동루관、불동비흡수층조분、불동비흡수층척촌조건하,기건성능적개변,특별시모식、역치화광-광전환효솔적개변,종이선택일개최가적결구.
A vertical-external-cavity surface-emitting 920 nm semiconductor laser (OP-VECSEL) with active region of In_(0.09)Ga_(0.91)As quantum well (QW) system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method, self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device, the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters,including number of QWs (1, 2 and 3) in one period, QW depth, width and component of barrier and dimension of the non-absorption layer. The best structure of the laser was chosen.