CAJ | 학술논문

采用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)方法,在康宁7101型普通玻璃衬底上低温沉积氮化镓(GaN)薄膜.利用反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和霍尔测量系统检测样品,研究了衬底氮化时间对GaN薄膜质量的影响.结果表明,氮化时间为5min时,得到的GaN薄膜呈高度c轴择优取向,结晶性较好,薄膜表面是由许多亚微米量级的表面岛按一致的取向规则堆砌而成的,薄膜表面较为平整且呈n型导电;氮化时间增加,薄膜结晶性反而变差.
채용전자회선공진-등리자체증강금속유궤물화학기상침적(ECR-PEMOCVD)방법,재강저7101형보통파리츤저상저온침적담화가(GaN)박막.이용반사고능전자연사(RHEED)、X사선연사(XRD)、원자력현미경(AFM)화곽이측량계통검측양품,연구료츤저담화시간대GaN박막질량적영향.결과표명,담화시간위5min시,득도적GaN박막정고도c축택우취향,결정성교호,박막표면시유허다아미미량급적표면도안일치적취향규칙퇴체이성적,박막표면교위평정차정n형도전;담화시간증가,박막결정성반이변차.
GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low temperature. The effect of substrate nitriding time on the quality of GaN flim is studied using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Hall measurements. The results show that GaN film deposited with substrate nitrided for 5min is of high c-axis preferred orientation and highly crystallined, its surface is composed of many submicron grains piled in the consistent orientation and the film shows the n-type electrical behavior. The crystallization of GaN film degrades as the substrate nitriding time increased.