上海大学学报（英文版）
上海大學學報（英文版）
상해대학학보（영문판）
JOURNAL OF SHANGHAI UNIVERSITY (ENGLISH EDITION)
2007年
4期
403-406
,共4页
葛艳辉%郭余英%史伟民%邱永华%魏光普
葛豔輝%郭餘英%史偉民%邱永華%魏光普
갈염휘%곽여영%사위민%구영화%위광보
tin sulfide%chemical bath deposition%doping.
SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively.Energy dispersive spectroscopy (EDS) showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra.
