CAJ | 학술논문

使用Hartree-Fock加相对论修正(HFR)近似计算Alq+(q=0—12)的光电离截面和Bethe系数，其中Bethe系数将光电离截面与电子碰撞电离截面联系起来,并且决定电子碰撞电离截面的高能行为.分析了光电离截面和Bethe系数随电离度q的变化规律，还与其他数据进行比较，结果表明其数据是可靠的.
사용Hartree-Fock가상대론수정(HFR)근사계산Alq+(q=0—12)적광전리절면화Bethe계수，기중Bethe계수장광전리절면여전자팽당전리절면련계기래,병차결정전자팽당전리절면적고능행위.분석료광전리절면화Bethe계수수전리도q적변화규률，환여기타수거진행비교，결과표명기수거시가고적.
The Hatree-Fock relativistic(HFR) method has been used to calculate the cross section of photoionization and the Bethe coefficient of all charge states of Al. The latter, which dominates the cross section of electron-impact ionization at high energy region, is also related to the cross section of photoionization. Variation of the cross section of different charge states is discussed. The data reported here is in good agreement with that of Verner et al. obtained with Hatree-Dirac-Slater method.