CAJ | 학술논문

在可商业获得的单晶6H-SiC晶片上，通过化学气相淀积，进行同质外延生长；并在此6H-SiC结构材料上，利用反应离子刻蚀和接触合金化技术，制作台面pn结二极管．详细测量并分析了器件的电学特性，测量结果表明此6H-SiC二极管在室温、空气介质中，-10V时，漏电流密度为2.4×10-8A/cm2，在反向电压低于600V及接近300℃高温下都具有良好的整流特性．
재가상업획득적단정6H-SiC정편상，통과화학기상정적，진행동질외연생장；병재차6H-SiC결구재료상，이용반응리자각식화접촉합금화기술，제작태면pn결이겁관．상세측량병분석료기건적전학특성，측량결과표명차6H-SiC이겁관재실온、공기개질중，-10V시，루전류밀도위2.4×10-8A/cm2，재반향전압저우600V급접근300℃고온하도구유량호적정류특성．
The fabrication and the　electrical characterization of p+n junction diodes on 6H-SiC are reported,using the　reactive ion etching and electrical contact metallization techniques．The mesa structured p+n junction diodes are fabricated in 6H-SiC epilayers grown by chemical vapor deposition on commercially available single-crystal 6H-SiC wafers， which　are　tested in the air　and　show a small reverse leakage current of 2.4×10-8A/cm2 at the　bias voltage of -10V　and the high breakdown voltage of 600V at room temperature．Good rectification characteristic is shown at a high temperature of 550K．