CAJ | 학술논문

本文描述了使用共面微波探针的半导体芯片在片测试技术.设计研制出的多种微波探针性能参数稳定，使用寿命在十万次以上，用于在片检测各种GaAs共面集成电路芯片.触头排列为GSG的微波探针，-3dB带宽及反射损耗分别为14GHz和小于-10dB.
본문묘술료사용공면미파탐침적반도체심편재편측시기술.설계연제출적다충미파탐침성능삼수은정，사용수명재십만차이상，용우재편검측각충GaAs공면집성전로심편.촉두배렬위GSG적미파탐침，-3dB대관급반사손모분별위14GHz화소우-10dB.
We present an on-wafer measurement technique of semiconductorwafer using special coplanar microwave probes.The probe parameters are repeatable enough for S-parameter measurements and the probe life is with 100,000 contacts guaranteed.The multi-contact microwave wafer probe has been developed for on-wafer testing and sifting of GaAs integrated circuits with coplanar type.The insertion loss of microwave probe with a GSG footprint pattern is typically less than 3.0dB,and the return loss is at least 10dB at frequencies below 14GHz.