CAJ | 학술논문

利用自感应耦合等离子(ICP)蚀刻机进行硅深层反应离子刻蚀,得到了几微米宽的狭槽,其轮廓通常为正锥形,即蚀刻槽的宽度随着蚀刻深度的增大而减小.然而,对一个宽槽来说,由于等离子区内边界层的变形,其蚀刻宽度会随着蚀刻深度的增加而增加.在许多应用中,硅蚀刻轮廓侧面的垂直状况是一个关键性问题.叙述了分离式垂直镜的加工过程;研究了影响蚀刻轮廓的各种重要参数.经过引入多步制法与优化激励源、基底偏压源及加工压力,减小了等离子区边界层内的变形,改善了轮廓的蚀刻状况.得到的结果为:120μm高垂直微镜垂直度为89.7°,200μm高垂直微镜垂直度为89.3°.
이용자감응우합등리자(ICP)식각궤진행규심층반응리자각식,득도료궤미미관적협조,기륜곽통상위정추형,즉식각조적관도수착식각심도적증대이감소.연이,대일개관조래설,유우등리자구내변계층적변형,기식각관도회수착식각심도적증가이증가.재허다응용중,규식각륜곽측면적수직상황시일개관건성문제.서술료분리식수직경적가공과정;연구료영향식각륜곽적각충중요삼수.경과인입다보제법여우화격려원、기저편압원급가공압력,감소료등리자구변계층내적변형,개선료륜곽적식각상황.득도적결과위:120μm고수직미경수직도위89.7°,200μm고수직미경수직도위89.3°.
In silicon deep reactive ion etching (DRIE) using inductively coupled plasma (ICP) etcher,a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth. However, for a wide trench, the width of etched profile will increase with the increase of its depth since the deformation of boundary layer in plasma. Verticality of sidewalls of etched profiles on silicon will be a critical problem in many applications. In this paper, the fabrication of isolated vertical mirrors is reported. With the introduction of multi-steps recipes and optimization of source power, substrate bias power and process pressure, the deformation in the plasma boundary layer was minimized and the etched profiles were improved. As the results, micro vertical mirrors of 120 μm high with a perpendicularity of 89.7° and mirrors of 200 μm high with 89.3° were realized.