CAJ | 학술논문

用热丝化学气相沉积方法研究了低温(～550℃)和低反应气压(～7 Torr)下硅片上金刚石膜的成核和生长.成核过程中采用2.5%的CH4浓度,在经充分超声波预处理的硅片上获得了高达1.5×1011cm.的成核密度.随CH4浓度的增加所成膜中的金刚石晶粒尺寸由亚微米转变到纳米级.成功合成了表面粗糙度小于4nm、超薄(厚度小于500nm)和晶粒尺寸小于50nm的纳米金刚石膜.膜与衬底结合牢固.膜从可见光至红外的光吸收系数小于2×104cm-1.用我们常规的HFCVD技术,在低温度和低压下可以生长出表面光滑超薄的纳米金刚石膜.
용열사화학기상침적방법연구료저온(～550℃)화저반응기압(～7 Torr)하규편상금강석막적성핵화생장.성핵과정중채용2.5%적CH4농도,재경충분초성파예처리적규편상획득료고체1.5×1011cm.적성핵밀도.수CH4농도적증가소성막중적금강석정립척촌유아미미전변도납미급.성공합성료표면조조도소우4nm、초박(후도소우500nm)화정립척촌소우50nm적납미금강석막.막여츤저결합뢰고.막종가견광지홍외적광흡수계수소우2×104cm-1.용아문상규적HFCVD기술,재저온도화저압하가이생장출표면광활초박적납미금강석막.
The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition (HFCVD) at the low temperature ( ～ 550℃ ) and low pressure ( ～ 7 Torr) were studied. Nucleation density (ND) as high as 1.5 × 1011cm-2 was obtained on well ultrasonically pretreated substrate at the nucleation conditions of 2.5% CH4/H2. Diamond grain sizes change form sub-micron to nano-meter scales with the increase of CH4 concentration. Smooth ultra-thin (thickness ＜500 nm) nano-crystalline diamond (NCD) films with grain sizes less than 50 nm and surface roughness as low as 4nm have been synthesized. The adhesion between the film and substrate is good. The optical absorption coefficient in visible (VIS)to infrared (IR) wavelength range is less than 2 × 104cm-1. Smooth ultra-thin NCD films can be synthesized at low temperature and low pressure by our conventional HFCVD technique.