压电与声光
壓電與聲光
압전여성광
PIEZOELECTRICS & ACOUSTOOPTICS
2009年
4期
541-543
,共3页
无机非金属材料%介质陶瓷%BiVO4掺杂%显微结构%介电性能
無機非金屬材料%介質陶瓷%BiVO4摻雜%顯微結構%介電性能
무궤비금속재료%개질도자%BiVO4참잡%현미결구%개전성능
non-metallic inorganic material%dielectric ceramics%BiVO4 doping%microstructure%dielectric property
采用传统陶瓷工艺制备了BiVO4掺杂的CaO-Li2O-Sm2O3-TiO2(CLST)介质陶瓷,用X-射线衍射仪、扫描电镜及电感-电容-电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究.结果表明,BiVO4掺杂能显著降低CLST陶瓷的烧结温度,由1 300 ℃降至1 200 ℃.BiVO4掺杂量为1%,烧结温度为1 200 ℃时,CLST陶瓷具有较好的综合介电性能:εr=88,tan δ=0.018,τ f =-30×10-6/℃.
採用傳統陶瓷工藝製備瞭BiVO4摻雜的CaO-Li2O-Sm2O3-TiO2(CLST)介質陶瓷,用X-射線衍射儀、掃描電鏡及電感-電容-電阻測試儀等對其燒結特性、相結構及介電性能進行瞭繫統研究.結果錶明,BiVO4摻雜能顯著降低CLST陶瓷的燒結溫度,由1 300 ℃降至1 200 ℃.BiVO4摻雜量為1%,燒結溫度為1 200 ℃時,CLST陶瓷具有較好的綜閤介電性能:εr=88,tan δ=0.018,τ f =-30×10-6/℃.
채용전통도자공예제비료BiVO4참잡적CaO-Li2O-Sm2O3-TiO2(CLST)개질도자,용X-사선연사의、소묘전경급전감-전용-전조측시의등대기소결특성、상결구급개전성능진행료계통연구.결과표명,BiVO4참잡능현저강저CLST도자적소결온도,유1 300 ℃강지1 200 ℃.BiVO4참잡량위1%,소결온도위1 200 ℃시,CLST도자구유교호적종합개전성능:εr=88,tan δ=0.018,τ f =-30×10-6/℃.
Dielectric ceramics CaO-Li2O-Sm2O3-TiO2 doped with BiVO4 were prepared by the conventional ceramic processing technology. The sintering behavior, crystal structure and dielectric properties of BiVO4 doped CLST ceramics were investigated systematically by X-ray diffraction, scanning electron microscopy and inductance-capacitance resistance analysis.The experimental results indicated that BiVO4 doping could decrease the sintering temperature remarkably from 1 300 ℃ to 1 200 ℃.The CLST ceramic with 1% BiVO4 doping sintered at 1 200 ℃ had some optimum dielectric properties: dielectric constant εr of 88, dielectric loss tan δ of 0.018 and temperature coefficient of resonance frequency τ f of -30×10-6/℃.