CAJ | 학술논문

室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜.采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析.实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm.
실온하,결합정교실험표,용사빈자공천사재조륜(PET)비직조포기재상생장AZO(Al2O3:ZnO)납미결구박막.채용사탐침측량의측시AZO박막적방괴전조,용원자력현미경(AFM)분석박막미결구;통과정교분석법대실험L9(33)AZO박막적성능지표진행분석.실험결과표명:천사후도대AZO박막도전성능기주도작용,기차위아기압강화천사공솔;동시,득출제비AZO박막적최가공예위:천사공솔150W、후도100m화기압0.2Pa,해삼수하양품적방괴전조위1.633×103Ω,AZO납미과립적평균직경약위69.4nm.
The aluminum oxide doped,transparent,conductive ZnO (AZO)films were deposited by RF magnetron sputtering at room temperature on substrates of polythylene terephthalate(PET)nonwovens.The microstructures and electric properties of the AZO films were characterized with atomic force microscopy(AFM)and conventional probes.The influence of the film growth conditions on film growth was studied with mathematical statistical models.The results show that the film thickness affects more strongly the sheet resistance of the film than the argon pressure and sputtering power do.The best AZO films were grown at a sputtering power of 150 W,an argon pressure of 0.2Pa and a film thickness of 100nm.The sheet resistance of the AZO films with an averaged grain size of 69.4 nm was found to be 1.633×103Ω.