真空科学与技术学报
真空科學與技術學報
진공과학여기술학보
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY
2010年
1期
64-67
,共4页
陈雷锋%蒋红%宋航%赵海峰%李志明%黎大兵%郭万国%曹连振%刘霞
陳雷鋒%蔣紅%宋航%趙海峰%李誌明%黎大兵%郭萬國%曹連振%劉霞
진뢰봉%장홍%송항%조해봉%리지명%려대병%곽만국%조련진%류하
碳纳米管%场发射%电泳%电镀%纳米银颗粒%接触电阻
碳納米管%場髮射%電泳%電鍍%納米銀顆粒%接觸電阻
탄납미관%장발사%전영%전도%납미은과립%접촉전조
Carbon nanotubes%Field emission%Electrophoresis%Electroplating%Ag-nanoparticals%Contact resistance
碳纳米管(CNT)和衬底的电学接触问题是获得高性能CNT电子器件的一个关键性的问题.本文采用电泳电镀方法制备CNT冷阴极,有效改善了CNT与衬底间接触电阻,增强了碳纳米管场发射性能.电泳电镀法制备的碳纳米管冷阴极场发射的开启电场(电流密度为10μA·cm~(-2)时的电场)由2.95 V·μm~(-1)降低到1.0V·μm~(-1),在电场为8V·μm~(-1)时电流密度由0.224增加到0.8112mA·cm~(-2).在电流密度为800μA·cm~(-2)时进行1h的场发射稳定性测试,结果表明,电泳电镀法所得CNT场发射电子源电流密度几乎不变,而且电流密度比较稳定;而只有电泳的方法获得的CNT场发射电子源电流密度波动较大,电流不稳定且呈较快的衰减趋势,1h后减少到原来的75%.采用电泳电镀方法制备CNT阴极,CNT的根部被纳米银颗粒覆盖和包裹,使CNT与衬底接触更加牢固而紧密,又由于银具有很好的导电性,从而大大减小了接触电阻,因此电泳电镀法能大大改善CNT与衬底的电学接触性能.
碳納米管(CNT)和襯底的電學接觸問題是穫得高性能CNT電子器件的一箇關鍵性的問題.本文採用電泳電鍍方法製備CNT冷陰極,有效改善瞭CNT與襯底間接觸電阻,增彊瞭碳納米管場髮射性能.電泳電鍍法製備的碳納米管冷陰極場髮射的開啟電場(電流密度為10μA·cm~(-2)時的電場)由2.95 V·μm~(-1)降低到1.0V·μm~(-1),在電場為8V·μm~(-1)時電流密度由0.224增加到0.8112mA·cm~(-2).在電流密度為800μA·cm~(-2)時進行1h的場髮射穩定性測試,結果錶明,電泳電鍍法所得CNT場髮射電子源電流密度幾乎不變,而且電流密度比較穩定;而隻有電泳的方法穫得的CNT場髮射電子源電流密度波動較大,電流不穩定且呈較快的衰減趨勢,1h後減少到原來的75%.採用電泳電鍍方法製備CNT陰極,CNT的根部被納米銀顆粒覆蓋和包裹,使CNT與襯底接觸更加牢固而緊密,又由于銀具有很好的導電性,從而大大減小瞭接觸電阻,因此電泳電鍍法能大大改善CNT與襯底的電學接觸性能.
탄납미관(CNT)화츤저적전학접촉문제시획득고성능CNT전자기건적일개관건성적문제.본문채용전영전도방법제비CNT랭음겁,유효개선료CNT여츤저간접촉전조,증강료탄납미관장발사성능.전영전도법제비적탄납미관랭음겁장발사적개계전장(전류밀도위10μA·cm~(-2)시적전장)유2.95 V·μm~(-1)강저도1.0V·μm~(-1),재전장위8V·μm~(-1)시전류밀도유0.224증가도0.8112mA·cm~(-2).재전류밀도위800μA·cm~(-2)시진행1h적장발사은정성측시,결과표명,전영전도법소득CNT장발사전자원전류밀도궤호불변,이차전류밀도비교은정;이지유전영적방법획득적CNT장발사전자원전류밀도파동교대,전류불은정차정교쾌적쇠감추세,1h후감소도원래적75%.채용전영전도방법제비CNT음겁,CNT적근부피납미은과립복개화포과,사CNT여츤저접촉경가뢰고이긴밀,우유우은구유흔호적도전성,종이대대감소료접촉전조,인차전영전도법능대대개선CNT여츤저적전학접촉성능.
A novel technique was successfully developed to assemble carbon nanotubes (CNTs),coated with Ag nano-particles,on glass substrate by a combination of electrophoresis and successive electroplating.The microstructures of the CNTs emitter assembly were characterized with scanning elctron microscopy (SEM) and energy dispersive spectroscopy (EDS).The influence of the two emitter fabrication techniques on field emission characteristics was studied. The results show that newly-developed technique considerably improves its emission properties.For instance,the onset voltage drops from 2.95V·μm~(-1) to 1.0V·μm~(-1) at an emission current density of 10μA·cm~(-2);and at 8V·μm~(-1),the emission current density rises up from 0.224 to 0.8112 mA·cm~(-2),remaining steady for at least 1h, possibly because of low electrical resistance at the interface of Ag coated CNTs and the substrate.However,the emission current density of the emitter, assembled by electrophoresis only,fluctuates too much, decaying by 25% after one hour.