电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2010年
2期
1-3
,共3页
张亚磊%杨成韬%于永杰%解群眺
張亞磊%楊成韜%于永傑%解群眺
장아뢰%양성도%우영걸%해군조
sol-gel旋涂法%CFO薄膜厚度%微结构%磁性能
sol-gel鏇塗法%CFO薄膜厚度%微結構%磁性能
sol-gel선도법%CFO박막후도%미결구%자성능
sol-gel spin-coating method%thickness of CFO thin film%microstructure%magnetic property
以铁和钴的硝酸盐为主要原料,采用sol-gel旋涂法在Si(001)基片上制备了不同厚度的CoFe_2O_4(CFO)薄膜.研究了薄膜厚度对其结构、形貌及磁性能的影响.结果表明:随着其厚度的增大,薄膜的结晶度变好,薄膜晶粒度逐渐增大到70 nm.M_s随着薄膜厚度的增大先增大后减小;H_c的变化规律和M_s相反.当薄膜厚度为800 nm时,M_s达到最大值59.2 A·m~2/kg,此时H_c最小为106.7 kA/m.该薄膜具有高度的平行各向异性.
以鐵和鈷的硝痠鹽為主要原料,採用sol-gel鏇塗法在Si(001)基片上製備瞭不同厚度的CoFe_2O_4(CFO)薄膜.研究瞭薄膜厚度對其結構、形貌及磁性能的影響.結果錶明:隨著其厚度的增大,薄膜的結晶度變好,薄膜晶粒度逐漸增大到70 nm.M_s隨著薄膜厚度的增大先增大後減小;H_c的變化規律和M_s相反.噹薄膜厚度為800 nm時,M_s達到最大值59.2 A·m~2/kg,此時H_c最小為106.7 kA/m.該薄膜具有高度的平行各嚮異性.
이철화고적초산염위주요원료,채용sol-gel선도법재Si(001)기편상제비료불동후도적CoFe_2O_4(CFO)박막.연구료박막후도대기결구、형모급자성능적영향.결과표명:수착기후도적증대,박막적결정도변호,박막정립도축점증대도70 nm.M_s수착박막후도적증대선증대후감소;H_c적변화규률화M_s상반.당박막후도위800 nm시,M_s체도최대치59.2 A·m~2/kg,차시H_c최소위106.7 kA/m.해박막구유고도적평행각향이성.
Using nitrate of iron and cobalt as main raw materials, CoFe_2O_4 (CFO) thin films were prepared on Si(001) substrates via the sol-gel spin-coating method.Effects of thickness for the thin films on their microstructure, morphology and magnetic properties were studied.The results indicate that with increase of the thickness, the crystallinity of the thin films gets better and the crystallites of the CFO thin films increase gradually to 70 nm.M_s firstly increase and then decrease with increase of the thickness for the thin films.The change regularity of H_c is contrary to M_s.M_s rise up to the peak value of 59.2 A·m~2/kg and H_c decrease to the minimum value of 106.7 kA/m when the thin film's thickness is 800 nm.The CFO thin films have high parallel anisotropy.