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万方数据

半导体学报 반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2006年 2期 235-238 ,共4页

唐宁%沈波%王茂俊%杨志坚%徐科%张国义%桂永胜%朱博%郭少令%褚君浩

당저%침파%왕무준%양지견%서과%장국의%계영성%주박%곽소령%저군호

AlxGa1-xN/GaN异质结构%二维电子气%输运性质 AlxGa1-xN/GaN異質結構%二維電子氣%輸運性質
AlxGa1-xN/GaN이질결구%이유전자기%수운성질
Alx Ga1- x N/GaN heterostructure%two-dimensional electron gas%transport property

在低温和强磁场下,通过磁输运测量研究了不同Al组分调制掺杂AlxGa1-xN/GaN异质结二维电子气(2DEG)的磁电阻振荡现象.观察到低Al组分异质结中的2DEG有较低的浓度和较高的迁移率.
재저온화강자장하,통과자수운측량연구료불동Al조분조제참잡AlxGa1-xN/GaN이질결이유전자기(2DEG)적자전조진탕현상.관찰도저Al조분이질결중적2DEG유교저적농도화교고적천이솔.
Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-x N/GaN hererostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.