功能材料与器件学报
功能材料與器件學報
공능재료여기건학보
JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES
2009年
6期
530-536
,共7页
周俊卿%程秀兰%张衍%单川
週俊卿%程秀蘭%張衍%單川
주준경%정수란%장연%단천
相变存储器%有限元分析%电学性能%热学性能%加热效率
相變存儲器%有限元分析%電學性能%熱學性能%加熱效率
상변존저기%유한원분석%전학성능%열학성능%가열효솔
phase change memory%FEA%electrical property%thermal property%heating efficiency
本文建立了相变存储器存储单元的有限元分析模型,对相变材料以及加热电极热电参数对加热效率、功耗的影响进行了研究.模拟研究表明:引入了随温度变化的相变层热导率,能更精确地模拟器件温度场;加热电极电阻率与相变层电阻率越大,加热效率越高,功耗越低;但为了使加热效率更集中在相变材料层中,加热电极电阻率不能大于相变层电阻率.其中,在相变材料设计选择方面,具有较高电阻率的Si_2Sb_2Te_5较传统的Ge_2Sb_2Te_5更适合应用于低功耗相变存储器的应用;而在底部加热电极的选择上,具有较高电阻率和低热导率的TiN较TiW、W或Ti等电极相比,在低功耗方面更具优势.
本文建立瞭相變存儲器存儲單元的有限元分析模型,對相變材料以及加熱電極熱電參數對加熱效率、功耗的影響進行瞭研究.模擬研究錶明:引入瞭隨溫度變化的相變層熱導率,能更精確地模擬器件溫度場;加熱電極電阻率與相變層電阻率越大,加熱效率越高,功耗越低;但為瞭使加熱效率更集中在相變材料層中,加熱電極電阻率不能大于相變層電阻率.其中,在相變材料設計選擇方麵,具有較高電阻率的Si_2Sb_2Te_5較傳統的Ge_2Sb_2Te_5更適閤應用于低功耗相變存儲器的應用;而在底部加熱電極的選擇上,具有較高電阻率和低熱導率的TiN較TiW、W或Ti等電極相比,在低功耗方麵更具優勢.
본문건립료상변존저기존저단원적유한원분석모형,대상변재료이급가열전겁열전삼수대가열효솔、공모적영향진행료연구.모의연구표명:인입료수온도변화적상변층열도솔,능경정학지모의기건온도장;가열전겁전조솔여상변층전조솔월대,가열효솔월고,공모월저;단위료사가열효솔경집중재상변재료층중,가열전겁전조솔불능대우상변층전조솔.기중,재상변재료설계선택방면,구유교고전조솔적Si_2Sb_2Te_5교전통적Ge_2Sb_2Te_5경괄합응용우저공모상변존저기적응용;이재저부가열전겁적선택상,구유교고전조솔화저열도솔적TiN교TiW、W혹Ti등전겁상비,재저공모방면경구우세.
In order to study the influence of thermal and electrical properties of phase change material and heater on heating efficiency and power consumption,a finite element analytical model was established.It is demonstrated by the simulation that a more accurate simulation can be done if introducing the temperature dependent thermal conductivity of phase change layer,and that heating efficiency is improved when increasing the resistivity of heater and phase change layer,and that the resistivity of heater should be lower than the resistivity of PCL in order to concentrate the heating efficiency in the phase change layer.In respect to the application of phase change memory with lower power consumption,those phase change materials that with relatively higher resistivity such as Si_2Sb_2Te_5 are more competent than the traditional Ge_2Sb_2Te_5,and for the heater material that can reduce power consumption,TiN is better than TiW,W and Ti.