红外与毫米波学报
紅外與毫米波學報
홍외여호미파학보
JOURNAL OF INFRARED AND MILLIMETER WAVES
2010年
3期
167-171,179
,共6页
赵莉娟%庞起%杨世和%葛惟昆%王建农
趙莉娟%龐起%楊世和%葛惟昆%王建農
조리연%방기%양세화%갈유곤%왕건농
四脚状纳米颗粒%PL衰减%局域载流子%表面缺陷
四腳狀納米顆粒%PL衰減%跼域載流子%錶麵缺陷
사각상납미과립%PL쇠감%국역재류자%표면결함
tetrapod nanoparticle%decay of photoluminescence%localized carrier%surface defect
主要研究了高产率CdSe四脚状纳米颗粒的时间分辨光学性质.结果表明在氯仿溶液中和均匀涂布在绝缘硅片上的CdSe四脚状纳米颗粒室温下的光致发光(PL)衰减曲线均可以用一个双e指数的衰减函数来拟合,荧光寿命短的部分对应快衰减,而寿命长的部分对应慢衰减.通过分析荧光寿命与PL峰的能量的关系可知,快衰减和慢衰减分别来自于非局域态载流子和局域态载流子的贡献.通过比较溶液中和硅片上两种情况的快衰减和慢衰减系数的比值,得出结论:CdSe四脚状纳米颗粒的PL快衰减和慢衰减分别来源于纳米颗粒中非局域态和颗粒表面缺陷中局域态的贡献.
主要研究瞭高產率CdSe四腳狀納米顆粒的時間分辨光學性質.結果錶明在氯倣溶液中和均勻塗佈在絕緣硅片上的CdSe四腳狀納米顆粒室溫下的光緻髮光(PL)衰減麯線均可以用一箇雙e指數的衰減函數來擬閤,熒光壽命短的部分對應快衰減,而壽命長的部分對應慢衰減.通過分析熒光壽命與PL峰的能量的關繫可知,快衰減和慢衰減分彆來自于非跼域態載流子和跼域態載流子的貢獻.通過比較溶液中和硅片上兩種情況的快衰減和慢衰減繫數的比值,得齣結論:CdSe四腳狀納米顆粒的PL快衰減和慢衰減分彆來源于納米顆粒中非跼域態和顆粒錶麵缺陷中跼域態的貢獻.
주요연구료고산솔CdSe사각상납미과립적시간분변광학성질.결과표명재록방용액중화균균도포재절연규편상적CdSe사각상납미과립실온하적광치발광(PL)쇠감곡선균가이용일개쌍e지수적쇠감함수래의합,형광수명단적부분대응쾌쇠감,이수명장적부분대응만쇠감.통과분석형광수명여PL봉적능량적관계가지,쾌쇠감화만쇠감분별래자우비국역태재류자화국역태재류자적공헌.통과비교용액중화규편상량충정황적쾌쇠감화만쇠감계수적비치,득출결론:CdSe사각상납미과립적PL쾌쇠감화만쇠감분별래원우납미과립중비국역태화과립표면결함중국역태적공헌.
Time resolved optical properties of CdSe tetrapod nanocrystals where studied. The results show that the decays of photoluminescence (PL) intensities for tetrapods in solution and on insulating silicon substrate can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes, the fast and slow PL decays of CdSe tetrapods are attributed to the recombination of delocalized carriers and the localized carriers in the localized states, respectively. By comparing the amplitude ratio of the fast-decay component to the slow-decay component for samples in solution with those on silicon, it is concluded that the slow PL decay is associated with the recombination of localized carriers in the surface defects of CdSe tetrapods.