CAJ | 학술논문

为了满足科学实验过程中对制作半导体器件和微纳米结构的需要,同时避免受到昂贵的工业级电子束曝光(electron beam lithography,EBL)机的条件制约,构建了一种基于普通扫描电子显微镜(scanning electron microscopy,SEM)的桌面级小型电子束曝光系统,建立了以浮点DSP为控制核心的高速图形发生器硬件系统,利用线性计算方法实现了电子束曝光场的增益、旋转和位移的校正算法,在本曝光系统中应用了新型压电陶瓷电机驱动的精密位移台来实现纳米级定位,利用此位移台所具有的纳米定位能力,采用标记追逐法实现了电子束曝光场尺寸和形状的校准,电子束曝光实验结果表明,场拼接及套刻精度误差小于100nm.为了测试曝光分辨率,在PMMA抗蚀剂上完成了宽度为30 nm的密集线条曝光实验.利用此系统,在负胶SU8和双层PMMA胶表面进行了曝光实验;并通过电子束拼接和套刻工艺实现了氮化物相变存储器微电极的电子束曝光工艺.
위료만족과학실험과정중대제작반도체기건화미납미결구적수요,동시피면수도앙귀적공업급전자속폭광(electron beam lithography,EBL)궤적조건제약,구건료일충기우보통소묘전자현미경(scanning electron microscopy,SEM)적탁면급소형전자속폭광계통,건립료이부점DSP위공제핵심적고속도형발생기경건계통,이용선성계산방법실현료전자속폭광장적증익、선전화위이적교정산법,재본폭광계통중응용료신형압전도자전궤구동적정밀위이태래실현납미급정위,이용차위이태소구유적납미정위능력,채용표기추축법실현료전자속폭광장척촌화형상적교준,전자속폭광실험결과표명,장병접급투각정도오차소우100nm.위료측시폭광분변솔,재PMMA항식제상완성료관도위30 nm적밀집선조폭광실험.이용차계통,재부효SU8화쌍층PMMA효표면진행료폭광실험;병통과전자속병접화투각공예실현료담화물상변존저기미전겁적전자속폭광공예.
To satisfy the requirement of fabricating semiconductor devices or micro/nano structure, and to avoid expensive cost of industrial electron beam lithography(EBL) machine, a desktop EBL system was developed based on a normal scanning electron microscopy (SEM) and fabrication techniques. The high speed pattern generator hardware system was set up with a floating-point digital signal processor( DSP) as the core controller. The EBL field calibration coefficients including gain, rotation and shift were calculat ed by linearity method. In order to achieve nanometer positioning accuracy, a novel precision stage driven by piezoelectric motors was used. Depending on the stage's nanometer positioning ability, mark chasing method was used for calibrating the EBL field size and shape. The lithography results show that stitching and overlay error is less than 100 nm. For testing the lithography resolution, parallel lines less than 30 nm in width were etched on resistant PMMA. Following a lithography test on SU8 and PMMA bi layer resists, the EBL process of nitride phase-change electrode was accomplished by EBL stitching and overlay methods.