CAJ | 학술논문

基于中国科学院微电子研究所的GaAs PIN二极管工艺,研究了一种单片单刀单掷开关.为了仿真该单片单刀单掷开关,研制开发了GaAs PIN二极管的小信号模型.在5.5～7.5GHz的频段内,开关正向导通时的插入损耗低于1.6dB,回波损耗大于10dB,开关关断状态的隔离度大于23dB.
기우중국과학원미전자연구소적GaAs PIN이겁관공예,연구료일충단편단도단척개관.위료방진해단편단도단척개관,연제개발료GaAs PIN이겁관적소신호모형.재5.5～7.5GHz적빈단내,개관정향도통시적삽입손모저우1.6dB,회파손모대우10dB,개관관단상태적격리도대우23dB.
A monolithic single pole single throw (SPST) switch is developed with GaAs PIN diode technology from IME-CAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an on-stateinsertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greaterthan 23dB from 5.5 to 7. 5GHz. The measured ldB power gain compression point is about 20dBm.