半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
5期
832-835
,共4页
吴茹菲%张海英%尹军舰%张健%刘会东%刘训春
吳茹菲%張海英%尹軍艦%張健%劉會東%劉訓春
오여비%장해영%윤군함%장건%류회동%류훈춘
GaAs PIN二极管%低损耗%高隔离%开关
GaAs PIN二極管%低損耗%高隔離%開關
GaAs PIN이겁관%저손모%고격리%개관
GaAs PIN diodes%low-loss%high-isolation%switch
报道了一种适用于X波段的低损耗高隔离度开关的GaAs PIN二极管.讨论了GaAs PIN二极管的物理特性和主要电学参数对开关性能的影响,并且介绍了工艺制备过程.测试结果表明在100MHz～12.1GHz范围内,正向电流为10mA时的开关电阻小于2.2Ω,而反向电压为-10V时开关电容小于20fF.
報道瞭一種適用于X波段的低損耗高隔離度開關的GaAs PIN二極管.討論瞭GaAs PIN二極管的物理特性和主要電學參數對開關性能的影響,併且介紹瞭工藝製備過程.測試結果錶明在100MHz～12.1GHz範圍內,正嚮電流為10mA時的開關電阻小于2.2Ω,而反嚮電壓為-10V時開關電容小于20fF.
보도료일충괄용우X파단적저손모고격리도개관적GaAs PIN이겁관.토론료GaAs PIN이겁관적물리특성화주요전학삼수대개관성능적영향,병차개소료공예제비과정.측시결과표명재100MHz～12.1GHz범위내,정향전류위10mA시적개관전조소우2.2Ω,이반향전압위-10V시개관전용소우20fF.
GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impactof diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAsPIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of <2. 2Ω andoff-state capacitance <20fF in the range of 100MHz to 12.1GHz are obtained.
