CAJ | 학술논문

本文不同的温度下制备多孔硅.通过荧光光谱、光吸收谱、X射线光电子谱研究了多孔硅的光和结构特性.研究结果表明存在着一个制备临界温度343 K,当制备温度从临界温度之下提高到临界温度之上时,多孔硅的荧光和光吸收从红移转向蓝移,同时硅2p电子结合能也从减小转向增大.
본문불동적온도하제비다공규.통과형광광보、광흡수보、X사선광전자보연구료다공규적광화결구특성.연구결과표명존재착일개제비림계온도343 K,당제비온도종림계온도지하제고도림계온도지상시,다공규적형광화광흡수종홍이전향람이,동시규2p전자결합능야종감소전향증대.
The porous silicon (PS) samples were prepared at different anodization temperature. Photolu-minescence, photo- absorbance, and X- ray photoelectron spectroscopies were used to study the struc-tural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si -2p binding energy transition from low to high at a critical anodization tem-perature, 343 K.