CAJ | 학술논문

为了改善玻璃衬底上制备的薄膜太阳电池的转换效率,采用高纯氮气作为等离子体气源,以质量分数为5%的SiH_4(Ar稀释)作为前驱气源,利用电子回旋共振-等离子体增强化学气相沉积技术在玻璃衬底上低温制备了氮化硅薄膜;利用各种测试设备分析了薄膜的成分、光学性能和表面形貌.结果表明:实验制备的非晶薄膜含氢量较低;薄膜的折射率随着衬底温度和微波功率的增加而增加.在衬底温度为350℃、微波功率为650 W时,薄膜的折射率在2.0左右,平均粗糙度为1.45 nm,还说明薄膜具有良好的光学性能和较高的表面质量.在此条件下,薄膜的沉积速率达到10.7 nm/min,表明本实验能在较高的沉积速率下制备均匀、平整、优质的SiN薄膜.
위료개선파리츤저상제비적박막태양전지적전환효솔,채용고순담기작위등리자체기원,이질량분수위5%적SiH_4(Ar희석)작위전구기원,이용전자회선공진-등리자체증강화학기상침적기술재파리츤저상저온제비료담화규박막;이용각충측시설비분석료박막적성분、광학성능화표면형모.결과표명:실험제비적비정박막함경량교저;박막적절사솔수착츤저온도화미파공솔적증가이증가.재츤저온도위350℃、미파공솔위650 W시,박막적절사솔재2.0좌우,평균조조도위1.45 nm,환설명박막구유량호적광학성능화교고적표면질량.재차조건하,박막적침적속솔체도10.7 nm/min,표명본실험능재교고적침적속솔하제비균균、평정、우질적SiN박막.
In order to improve manufacturing efficiency for thin film solar cells on glass substrates, silicon nitride film was deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) at low temperature on a glass substrate. Pure nitrogen was used as the plasma gas, and silane (Ar diluted, 5% SiH_4) as the precursor gas. Results show that uniform silicon nitride film with low hydrogen content can be deposited at a high deposition rate (10.7 nm/min). The refractive index increased with rising substrate temperature and increased microwave power. The film has good optical properties (refractive index around 2.0) and surface quality (average roughness 1.45 nm) when the deposition parameters are T=350℃ and p=650 W. This allows a uniform, even, and high quality SiN film to be prepared at higher deposition speeds.