CAJ | 학술논문

采用光刻法制备了薄膜晶体管的银源漏电极，实验中变换不同的刻蚀剂以减少对SiO2栅绝缘层的损害。底接触法蒸镀的酞菁铜作为晶体管器件的有源层，制得的晶体管器件的输出特性曲线显示该器件的输出电流具有趋于饱和的倾向。
채용광각법제비료박막정체관적은원루전겁，실험중변환불동적각식제이감소대SiO2책절연층적손해。저접촉법증도적태정동작위정체관기건적유원층，제득적정체관기건적수출특성곡선현시해기건적수출전류구유추우포화적경향。
The silver source and drain electrodes of thin - film transistor were prepared by photolithography method,and changed the different etching agents in the test to reduce the SiO2 gate insulator layer＇ s damage. Copper phthalocyanine（CuPc） as the active layer of the transistor devices with bottom contact method, the output characteristic curves of transistors showed that the device＇ s output current had a tendency to become saturated.