CAJ | 학술논문

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.
개소료일충기우공진수천이겁관(RTD)화고전자천이솔정체관(HEMT)적단편집성전로.채용분자속외연기술재GaAs저층상중첩생장료RTD화HEMT결구.RTD실온하적봉곡전류비위5.2∶1,봉치전류밀도위22.5kA/cm2.HEMT채용1μm책장,역치전압위-1V.설계전로칭위단은태-쌍은태전환라집단원(MOBILE).실험결과현시료해전로라집운행성공,운행빈솔가체2GHz이상.
A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.The RTD has a room temperature peak-to-valley ratio of 5.2∶1 with a peak current density of 22.5kA/cm2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.