东南大学学报(英文版)
東南大學學報(英文版)
동남대학학보(영문판)
JOURNAL OF SOUTHEAST UNIVERSITY
2009年
2期
175-179
,共5页
谢书珊%王志功%潘海仙%吕晓迎
謝書珊%王誌功%潘海仙%呂曉迎
사서산%왕지공%반해선%려효영
神经信号%探测%噪声%微电极阵列%CMOS工艺
神經信號%探測%譟聲%微電極陣列%CMOS工藝
신경신호%탐측%조성%미전겁진렬%CMOS공예
neuronal signal%detecting%noise%micro-electrode array ( MEA )%complementary metal-oxide-semiconductor transistor (CMOS) technology
介绍了单片集成MEA系统和用于该系统的神经元信号探测电路和激励电路,基本单元电路是低功耗、低噪声、高增益和小版图尺寸的运算放大器.详细讨论了探测电路、激励电路和基本单元运算放大器的设计.神经元信号探测电路版图面积290 μm×400 μm,功耗2.02 mw,等效输入噪声17.72 nV/Hz,增益60.5 dB,输出电压摆幅-2.48~+2.5 V.激励电路版图面积130μm×290 μm,功耗740μW,输出电压摆幅-2.5~2.04 V.参数表明这2种电路适用于单片集成MEA系统.探测电路和单片集成MEA系统已经流片.探测电路的测试结果表明电路工作正常.
介紹瞭單片集成MEA繫統和用于該繫統的神經元信號探測電路和激勵電路,基本單元電路是低功耗、低譟聲、高增益和小版圖呎吋的運算放大器.詳細討論瞭探測電路、激勵電路和基本單元運算放大器的設計.神經元信號探測電路版圖麵積290 μm×400 μm,功耗2.02 mw,等效輸入譟聲17.72 nV/Hz,增益60.5 dB,輸齣電壓襬幅-2.48~+2.5 V.激勵電路版圖麵積130μm×290 μm,功耗740μW,輸齣電壓襬幅-2.5~2.04 V.參數錶明這2種電路適用于單片集成MEA繫統.探測電路和單片集成MEA繫統已經流片.探測電路的測試結果錶明電路工作正常.
개소료단편집성MEA계통화용우해계통적신경원신호탐측전로화격려전로,기본단원전로시저공모、저조성、고증익화소판도척촌적운산방대기.상세토론료탐측전로、격려전로화기본단원운산방대기적설계.신경원신호탐측전로판도면적290 μm×400 μm,공모2.02 mw,등효수입조성17.72 nV/Hz,증익60.5 dB,수출전압파폭-2.48~+2.5 V.격려전로판도면적130μm×290 μm,공모740μW,수출전압파폭-2.5~2.04 V.삼수표명저2충전로괄용우단편집성MEA계통.탐측전로화단편집성MEA계통이경류편.탐측전로적측시결과표명전로공작정상.
A neuronal signal detecting circuit and a neuronal signal stimulating circuit designed for a monolithic integrated MEA(micro-electrode array) system are described. As a basic cell of the circuits, an OPA(operational amplifier) is designed with low power, low noise, small size and high gain. The detecting circuit has a chip area of 290 μm×400μm, a power dissipation of 2. 02 mW, an equivalent input noise of 17.72 nV/ Hz, a gain of 60. 5 dB, and an output voltage from - 2. 48 to + 2.5 V. The stimulating circuit has a chip area of 130 μm×290 μm, a power dissipation of 740 μW, and an output voltage from - 2. 5 to 2. 04 V. The parameters show that two circuits are suitable for a monolithic integrated MEA system. The detecting circuit and MEA have been fabricated. The test results show that the detecting circuit works well.