CAJ | 학술논문

采用南京电子器件研究所4英0.25 μm GaAs PHEMT工艺技术,设计、制作Ku波段GaAs MMIC六位数控移相器芯片,芯片尺寸为3 mm×1.1 mm×0.1 mm.在15～17 GHz设计频带内,该移相器具有优良的电性能,插入损耗小于9 dB,移相精度(RMS)小于1°,输入输出电压驻波比小于1.4.
채용남경전자기건연구소4영0.25 μm GaAs PHEMT공예기술,설계、제작Ku파단GaAs MMIC육위수공이상기심편,심편척촌위3 mm×1.1 mm×0.1 mm.재15～17 GHz설계빈대내,해이상기구유우량적전성능,삽입손모소우9 dB,이상정도(RMS)소우1°,수입수출전압주파비소우1.4.
This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing NEDI 0.25 μm GaAs PHEMT process. The developed 6-bit phase shifter demonstrates an overall phase deviation (RMS) less than 1s described. The prescaler uses the structure of high-speed D flip-flop and multi-stage driving circuit for power supply. Chip test results show that the highest frequency of the prescaler is up to 18 GHz. Under the supply voltage of 5 V, the static DC current of the prescaler is 85 mA.