CAJ | 학술논문

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.
연구료구유OTS/SiO2쌍절연층결구급MoO3/Al전겁결구적유궤박막정체관.기건시이열생장적Si02작위유궤박막정체관적책절연층,태정동작위유원층적.OTS/SiO2쌍절연층적결구제고료기건적장효응천이솔화개관전류비,강저료역치전압.실험표명재동양적책겁전압하,구유MoO3/Al전겁적기건화금전겁적기건유착상사적원루수출전류.결과현시구유OTS/SiO2쌍절연층급MoO3/Al전겁결구적기건능유효개진유궤박막정체관적성능.
An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.