CAJ | 학술논문

高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料.通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计.通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料.利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好.
고분변솔X사선연사기술피용래분석기우InP츤저적응변적InGaAs화InAlAs단층재료화응변보상적InGaAs/InAlAs초정격재료.통과도공간mapping득도적단층재료적착향각대약위10-3도,가이홀략불계.통과요파곡선득도료단층재료적조분화체실배도,접착단층재료적결과피용래분석재상동적조건하이용MBE기술생장적초정격재료.이용도공간mapping정학득도료초정격적평균수직실배도화각층적후도,통과X사선모의연건득도적초정격재료적모의곡선화실측곡선문합적흔호.
High resolution x - ray diffraction (HRXRD) is used to analyze the structure of InP - based single -layer InGaAs and InAlAs materials and strain -compensated InGaAs/InA1As superlattice materi-al. The calculated value of the misorientation - angle of single - layer materials according to the recipro-cal space mapping is about 10-3 degree and it can be neglected. Then the composition and bulk mismatch of the single - layer materials are obtained through the rocking curves. The results of the single - layer materials are then used to analyze the superlattice material grown under the same conditions with molecule beam epitaxy (MBE) technology. The average perpendicular mismatch and the thickness of the superlat-tice are obtained accurately from the reciprocal space mapping. The simulated curve of the superlattice material through the x- ray simulation software matches very well with the measured curve.