CAJ | 학술논문

典型的帶隙基准电压源电路是由CMOS工艺产生的具有负温度系数的寄生横向BJT的发射结电压V_(EB)和具有正温度系数的热电压V_t 相补偿产生零温度系数的基准帶隙电压源.但是V_(EB)与温度不是线性关系, 因此V_(REF)需要被校正.本文介绍了一种高精度自偏置多段二次曲率补偿的CMOS帶隙基准电压源.采用0.5 μm CMOS工艺、工作电压为3.3 V,该芯片室温下功耗为94 μW.设计在0 ℃~75 ℃有效温度系数达到了0.7 ppm/℃.
전형적대극기준전압원전로시유CMOS공예산생적구유부온도계수적기생횡향BJT적발사결전압V_(EB)화구유정온도계수적열전압V_t 상보상산생령온도계수적기준대극전압원.단시V_(EB)여온도불시선성관계, 인차V_(REF)수요피교정.본문개소료일충고정도자편치다단이차곡솔보상적CMOS대극기준전압원.채용0.5 μm CMOS공예、공작전압위3.3 V,해심편실온하공모위94 μW.설계재0 ℃~75 ℃유효온도계수체도료0.7 ppm/℃.
A typical bandgap voltage circuit is built up with the negative temperature coefficient of V_(EB) across the base-emitter of the parasitic BJT in CMOS process and the positive temperature coefficient of Vt. But the temperature dependence of V_(EB) is not linear, therefore, the V_(REF) need be corrected. In this paper, a high precision self-bias multi-range second order curvature compensated CMOS bandgap voltage reference has been described. The new proposed bandgap voltage reference is implemented in 0.5 μm CMOS technology and operates under 3.3 V supply voltage consuming 94 μW at room temperature. The effictive temperature coefficient of this circuit achieves 0.7 ppm/ in the temperature ranging from 0 ℃ to 75 ℃.