CAJ | 학술논문

针对接近式紫外光刻图形转移中的曝光形状失真问题,采用波前分割的方法对掩模图形上的波前进行区域划分,并利用光场相干叠加相互抵消的性质,最终得到掩模图形上对场点光场影响最大的波前区域,并得到实验验证.应用模拟退火算法对掩模特征处进行局部优化,在保证优化效果的基础上,使优化过程大大简化.
침대접근식자외광각도형전이중적폭광형상실진문제,채용파전분할적방법대엄모도형상적파전진행구역화분,병이용광장상간첩가상호저소적성질,최종득도엄모도형상대장점광장영향최대적파전구역,병득도실험험증.응용모의퇴화산법대엄모특정처진행국부우화,재보증우화효과적기출상,사우화과정대대간화.
Graphics distortion caused by the diffraction in proximity lithography exposure process in UV-LIGA technology affects quality of MEMS structure.A theoretical model based on wave-front division is presented.The mask pattern is divided into sub-regions and the impact of their wave-fronts on the diffraction field is investigated.For interference cancellation of the diffraction light,disturbances caused by wave-front on some regions are equal to zero approximatively.So a special region can be finally attained,in which the wave-front has the most contribution to the field point and experiments have verified the calculation results.A method which employed the Simulated Annealing Algorithm (SA) was studied to optimize the characteristic regions of photo mask.The optimization process is greatly simplified,with yet higher quality.