CAJ | 학술논문

介绍了增强型InGaP/AlGaAs/InGaAs PHEMT小信号等效电路中元件参数值的提取方法,并利用IC-CAP软件EEHEMT1模型提取了参数.利用ADS软件验证了提参结果,ADS仿真的直流I-V曲线和S参数与实测结果基本吻合.结果表明EEHEMT1模型可以用于提取增强型PHEMT参数,并且具有可操作性.
개소료증강형InGaP/AlGaAs/InGaAs PHEMT소신호등효전로중원건삼수치적제취방법,병이용IC-CAP연건EEHEMT1모형제취료삼수.이용ADS연건험증료제삼결과,ADS방진적직류I-V곡선화S삼수여실측결과기본문합.결과표명EEHEMT1모형가이용우제취증강형PHEMT삼수,병차구유가조작성.
An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/InGaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software, and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.