CAJ | 학술논문

为研究保护环结构对平面型正照射式InP/InGaAs探测器光敏元扩大现象的抑制作用,设计并研制了带有不同保护环-光敏元间距的InGaAs探测器.通过原子力显微镜(AFM)及扫描电容显微镜(SCM)获得了保护环与光敏元之间的实际距离.利用激光束诱导电流(LBIC)技术研究了带有保护环结构的InGaAs探测器的光响应特性.研究表明,无保护环结构的探测器的LBIC信号可以用指数衰减函数描述,而带有保护环结构的探测器的LBIC信号则遵从高斯分布.引入保护环结构后,器件光敏元的扩大量会随着保护环-光敏元间距的减小而线性减小.在器件设计中,比较合适的保护环-光敏元间距应介于7～12μm之间.
위연구보호배결구대평면형정조사식InP/InGaAs탐측기광민원확대현상적억제작용,설계병연제료대유불동보호배-광민원간거적InGaAs탐측기.통과원자력현미경(AFM)급소묘전용현미경(SCM)획득료보호배여광민원지간적실제거리.이용격광속유도전류(LBIC)기술연구료대유보호배결구적InGaAs탐측기적광향응특성.연구표명,무보호배결구적탐측기적LBIC신호가이용지수쇠감함수묘술,이대유보호배결구적탐측기적LBIC신호칙준종고사분포.인입보호배결구후,기건광민원적확대량회수착보호배-광민원간거적감소이선성감소.재기건설계중,비교합괄적보호배-광민원간거응개우7～12μm지간.
To study the guard-ring suppression effect on the extension of the photo-sensitive area in planar-type front illuminated InP/InGaAs hetero-structure detector,the InGaAs photo detectors with different distances between guard-ring and PN junction were designed and fabricated. The actual distance between guard-ring and PN junction of the detector was calculated based on the atomic force microscopy (AFM) and scanning capacitance microscopy (SCM) measurements. The characteristics of the photo response of the detectors with guard-ring were carried out with laser beam induced current (LBIC) method. It was indicated that LBIC signal of the photo detector without guard-ring fit well with the exponential decay function, while that of detector with guard-ring followed the Gaussian distribution. The extension value of the photo-sensitive area decreased linearly as the distance between the guard-ring and PN junction decreased. It was concluded that the appropriate gap between the guard-ring and PN junction should be in the range of 7 to 12μm.