CAJ | 학술논문

介绍了一种面向384×288 CMOS面阵性红外读出电路的低功耗设计.针对探测器的特点(输出阻抗约100kΩ,积分电流约100nA),新提出并实现了一种四像素共用BDI的QSBDI(Quad-share BDI)像素结构.在QSBDI结构中,4个相邻的像素共用一个反馈放大器,从而实现了高注入效率、稳定的偏置、较好的FPN特性和低功耗.另外该384×288读出电路还支持积分然后读出、积分同时读出功能,还有两个可选择的增益以及4种窗口读出模式.128×128的测试读出电路已完成设计、加工和测试.电路使用CSMC0.5μm DPTM工艺流片,测试结果表明在每个子阵列输出的峰峰差异仅为10mV.在4MHz的工作频率下,像素级引入的功耗仅为1mW,芯片的整体功耗也只有37mW,实现了低功耗设计.
개소료일충면향384×288 CMOS면진성홍외독출전로적저공모설계.침대탐측기적특점(수출조항약100kΩ,적분전류약100nA),신제출병실현료일충사상소공용BDI적QSBDI(Quad-share BDI)상소결구.재QSBDI결구중,4개상린적상소공용일개반궤방대기,종이실현료고주입효솔、은정적편치、교호적FPN특성화저공모.령외해384×288독출전로환지지적분연후독출、적분동시독출공능,환유량개가선택적증익이급4충창구독출모식.128×128적측시독출전로이완성설계、가공화측시.전로사용CSMC0.5μm DPTM공예류편,측시결과표명재매개자진렬수출적봉봉차이부위10mV.재4MHz적공작빈솔하,상소급인입적공모부위1mW,심편적정체공모야지유37mW,실현료저공모설계.
This paper presents a low power design for a 384 × 288 infrared (IR) readout integrated circuit (ROIC). For the character of IR detector (ro ≈ 100kΩ, Iint ≈ 100nA), a novel pixel structure called quad-share buffered direct injection (QSBDI) is proposed and realized. In QSBDI,four neighbor pixels share one buffered amplifier,which creates high injection efficiency, a stable bias, good FPN performance,and low power usage. This ROIC also supports two integration modes (integration then readout and integration while readout), two selectable gains, and four window readout modes. A test 128 ×128 ROIC is designed,fabricated,and tested. The test results show that the ROIC has good linearity. The peak to peak variance of the sub array is about 10mV. The power of pixel stage is only 1mW,and the total power dissipation is 37mW at a working frequency of 4MHz.