半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2004年
6期
626-632
,共7页
白大夫%刘训春%袁志鹏%钱永学
白大伕%劉訓春%袁誌鵬%錢永學
백대부%류훈춘%원지붕%전영학
异质结双极型晶体管%功率放大器%偏置网络%增益压缩%静态偏置电流
異質結雙極型晶體管%功率放大器%偏置網絡%增益壓縮%靜態偏置電流
이질결쌍겁형정체관%공솔방대기%편치망락%증익압축%정태편치전류
heterojunction bipolar transistor%power amplifier%bias network%gain compression%quiescent bias current
采用三指单胞的InGaP/GaAs HBT提取的大信号模型参数,设计出应用于ISM频段的三级AB类功率放大器.通过对传统偏置网络的优化,消除了小信号下的增益压缩.在3.5V电压下,该放大器的最大线性输出功率为30dBm,增益达到29.1dB,对应的功率附加效率为43.4%,临近沟道抑制比达到-100dBc,而静态偏置电流很低,只有109.7mA.
採用三指單胞的InGaP/GaAs HBT提取的大信號模型參數,設計齣應用于ISM頻段的三級AB類功率放大器.通過對傳統偏置網絡的優化,消除瞭小信號下的增益壓縮.在3.5V電壓下,該放大器的最大線性輸齣功率為30dBm,增益達到29.1dB,對應的功率附加效率為43.4%,臨近溝道抑製比達到-100dBc,而靜態偏置電流很低,隻有109.7mA.
채용삼지단포적InGaP/GaAs HBT제취적대신호모형삼수,설계출응용우ISM빈단적삼급AB류공솔방대기.통과대전통편치망락적우화,소제료소신호하적증익압축.재3.5V전압하,해방대기적최대선성수출공솔위30dBm,증익체도29.1dB,대응적공솔부가효솔위43.4%,림근구도억제비체도-100dBc,이정태편치전류흔저,지유109.7mA.
With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.