CAJ | 학술논문

用椭偏仪、傅氏变换红外吸收谱(FT-IR)、X射线光电子能谱(XPS)以及原子力显微镜(AFM)对N+1，N+2，N+10离子高剂量(1.7×1017 ions/cm2)注入Si(111)的表面进行测试分析，发现三种不同尺度的离子注入后，均使Si由复折射率变化为实折射率，表面出现含氮-硅键的介质层.但其表面形貌各异：N+1注入的表面除存在少量点蚀坑外，光洁度最高(平均粗糙度Ra≈4.2nm)，接近未注入前的原始表面(Ra≈3.5nm)；N+2注入的出现黑色枝状区域，光洁度次之(Ra≈16nm)，而N+10注入的则出现“波纹”状结构，光洁度最差(Ra≈40nm).与低能团簇注入相反，在高能条件下，随着离子尺度和注量增加，材料表面的粗糙度也越严重.
용타편의、부씨변환홍외흡수보(FT-IR)、X사선광전자능보(XPS)이급원자력현미경(AFM)대N+1，N+2，N+10리자고제량(1.7×1017 ions/cm2)주입Si(111)적표면진행측시분석，발현삼충불동척도적리자주입후，균사Si유복절사솔변화위실절사솔，표면출현함담-규건적개질층.단기표면형모각이：N+1주입적표면제존재소량점식갱외，광길도최고(평균조조도Ra≈4.2nm)，접근미주입전적원시표면(Ra≈3.5nm)；N+2주입적출현흑색지상구역，광길도차지(Ra≈16nm)，이N+10주입적칙출현“파문”상결구，광길도최차(Ra≈40nm).여저능단족주입상반，재고능조건하，수착리자척도화주량증가，재료표면적조조도야월엄중.
The measurement and analysis were carried out on the Si(111) surface implanted by N+1,N+2,N+10 cluster ions with high doses (1.7×1017ions/cm2) at 76keV energy using ellipsometry,Fourier-transform infrared (FT-IR) absorption spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy.It was found that the medium layer containing Si_N bond on the surface appeared,and their complex refractive index turned into real;however,at the same implantation dose their surface morphologies were different from each other.Expect for a few pittings,the N+1-implanted surface had a best fineness (average roughness Ra≈4.2nm), close to the unimplanted original surface.The N+2-implanted surface had a black dendritic area,and had a poorer fineness (Ra≈16nm).While in the N+10-implanted surface appeared a ripple structure,with the poorest fineness (Ra≈40nm).It was indicated that the roughness of the material surface increased with the ion size and fluence at the high energy in contrast to the cluster implantation at the low energy.