CAJ | 학술논문

采用单量子阱近似模型，对InGaN/GaN量子阱中的激子和电子在导带子带间跃迁的光吸收效应进行了理论分析和数值计算.结果表明，In的含量对激子的能量影响较大，而量子阱宽度的变化也对激子的能量有着微调作用；导带中电子从基态至第一激发态跃迁的吸收峰比较明显；随着In的含量增加，量子阱中的激子能量间隔增大，吸收谱线的峰值位置会发生蓝移.
채용단양자정근사모형，대InGaN/GaN양자정중적격자화전자재도대자대간약천적광흡수효응진행료이론분석화수치계산.결과표명，In적함량대격자적능량영향교대，이양자정관도적변화야대격자적능량유착미조작용；도대중전자종기태지제일격발태약천적흡수봉비교명현；수착In적함량증가，양자정중적격자능량간격증대，흡수보선적봉치위치회발생람이.
The excitonic states and the intersubband optical absorption within the conduction band of quantum well have been studied theoretically by using an approximate model of single quantum well. The excitonic energy depends on the In component obviously and also on the width of the quantum well slightly. With the increase of In component the energy gaps between different excitonic states get bigger and the absorption peaks corresponding to the transition of states get shift. In conduction band electronic transition from the ground state to the first excited state is dominating.