CAJ | 학술논문

为了在光开关器件的制作中实现低传输损耗的光波导，对InGaAs/InGaAsP分别限制异质结多量子阱(SCH-MQW)激光器结构进行了一系列带隙蓝移实验.将能量1～2MeV、注量1～5×1013 cm-2的P+注入到实验样品后，在700℃下快速热退火90s.发现光致发光谱的峰值位置发生蓝移9～89nm.蓝移量随着注入能量和注量的增大而增大，并且能量比注量对蓝移的影响更大.
위료재광개관기건적제작중실현저전수손모적광파도，대InGaAs/InGaAsP분별한제이질결다양자정(SCH-MQW)격광기결구진행료일계렬대극람이실험.장능량1～2MeV、주량1～5×1013 cm-2적P+주입도실험양품후，재700℃하쾌속열퇴화90s.발현광치발광보적봉치위치발생람이9～89nm.람이량수착주입능량화주량적증대이증대，병차능량비주량대람이적영향경대.
A very successful technique that uses phosphorus ion implantation to enhance the interdiffusion of QW in InP based laser structure is described. The implanted ions create a large number of vacancies, which diffuse through the QW region upon annealing. The interdiffusion of both column Ⅲ and column Ⅴ atoms at the interface between barrier and QW layers takes place. Room-temperature photoluminescence (PL) spectra are obtained from the samples. PL emission peaks of the samples vary with dose and energy of implantation. PL spectrum are blue-shifted in wavelength from 9nm to 89nm. This reproducible technique of lateral band-gap control can be used in quantum-well photonics integrated circuits to produce low-loss waveguide.