CAJ | 학술논문

研究了温度的升高对低场迁移率及阈值电压的影响,建立了模拟AlGaN/GaN HEMT直流I-V特性的热解析模型.模型考虑了极化、材料热导率、电子迁移率、薄层载流子浓度、饱和电子漂移速度及导带断续的影响.模拟结果表明,低场迁移率随温度的升高而下降,阈值电压随温度的升高略有增加,但变化很小,而沟道温度随漏压的增加上升很快,并最终导致输出漏电流的下降.最后将模拟结果与实验值进行对比,符合较好,证明了该模型的正确性,并可以应用于SiC和蓝宝石两种不同衬底AlGaN/GaN HEMT器件的模拟.
연구료온도적승고대저장천이솔급역치전압적영향,건립료모의AlGaN/GaN HEMT직류I-V특성적열해석모형.모형고필료겁화、재료열도솔、전자천이솔、박층재류자농도、포화전자표이속도급도대단속적영향.모의결과표명,저장천이솔수온도적승고이하강,역치전압수온도적승고략유증가,단변화흔소,이구도온도수루압적증가상승흔쾌,병최종도치수출루전류적하강.최후장모의결과여실험치진행대비,부합교호,증명료해모형적정학성,병가이응용우SiC화람보석량충불동츤저AlGaN/GaN HEMT기건적모의.
The effects of elevated temperatures on low-field mobility and threshold voltage were investigated. A temperature dependent analytical model was presented for AlGaN/GaN HEMT to simulate the DC I-V performance. In this model the effects of polarization, material thermal conductivity, electron mobility, sheet carrier density, velocity saturation and conduct band discontinuity were taken into consideration. The simulated results show that low field mobility decreases, whereas threshold voltage slightly increases with the increment of temperature, channel temperature rises greatly with the increase of drain voltage and results in the decrease of drain current. The comparison between simulations and measurements shows a good agreement, it pwves that this model is accurate and can simulate the DC I-V performance of AlGaN/GaN HEMT for SiC and sapphire substrate.