CAJ | 학술논문

氮氧化物和硫氧化物在介质阻挡放电(DBD)反应器中的脱除率与很多因素有关,如氧气含量、相对湿度和烟气中SO_2的初始浓度等.本文通过改变SO_2初始浓度、氧气含量和相对湿度来研究脱除氮氧化物和硫氧化物过程中的反应机理.结果发现,在N_2/SO_2/NO体系中SO_2初始浓度在较大范围内变化对NO和SO_2的脱除率影响很小;而N_2/NO/SO_2/H_2O体系中相对湿度的增加对SO_2的脱除的影响较NO的影响大,增加烟气中相对湿度能明显减少SO_2在烟气中的浓度;N_2/NO/SO_2/O_2体系中氧气的增加对SO_2的脱除效率影响不明显,但能促进NO氧化成NO_2或者其他的氮氧化物,同时,在一定的条件下,也能加速NO的生成.探讨NO和SO_2的反应机理,发现SO_2的反应主要与OH和水合电子有关,而NO的反应与O、N等活性基相关.
담양화물화류양화물재개질조당방전(DBD)반응기중적탈제솔여흔다인소유관,여양기함량、상대습도화연기중SO_2적초시농도등.본문통과개변SO_2초시농도、양기함량화상대습도래연구탈제담양화물화류양화물과정중적반응궤리.결과발현,재N_2/SO_2/NO체계중SO_2초시농도재교대범위내변화대NO화SO_2적탈제솔영향흔소;이N_2/NO/SO_2/H_2O체계중상대습도적증가대SO_2적탈제적영향교NO적영향대,증가연기중상대습도능명현감소SO_2재연기중적농도;N_2/NO/SO_2/O_2체계중양기적증가대SO_2적탈제효솔영향불명현,단능촉진NO양화성NO_2혹자기타적담양화물,동시,재일정적조건하,야능가속NO적생성.탐토NO화SO_2적반응궤리,발현SO_2적반응주요여OH화수합전자유관,이NO적반응여O、N등활성기상관.
There are many factors which affect the removal rate of nitrogen oxides and sulfur oxides in the reactor energized by dielectric barrier discharge (DBD),such as oxygen content,relative humidity and SO_2 initial concentration in the flue gas.In this paper,SO_2 initial concentration,oxygen content and relative humidity in the flue gas were changed to study the reaction mechanism of NO and SO_2 in the dielectric barrier discharge plasma process.The results showed that the initial concentration of SO_2 varying even in a larger range had little effect on the removal rate of NO and SO_2 in the N_2/SO_2/NO system.Increasing the relative humidity in the N_2/NO/SO_2/H_2O system could reduce the concentration of SO_2 significantly in the flue gas,and its influence on SO_2 is more obvious than that on NO.In the system of N_2/NO/SO_2/O_2,the influence of oxygen content on the removal rate of SO_2 was not obvious,but more obvious on the reaction of NO in the DBD process.Adding O_2 could promote the conversion of NO into NO_2 and other nitrogen oxides.On the other hand,the generation of NO was also accelerated under some circumstances.Analysis of the reaction mechanism based on the experiment demonstrated that the SO_2 reaction was mainly related to the active free was related to O and N.