CAJ | 학술논문

采用Chartered 0.35μm EEPROM工艺设计并实现了一个适用于无源射频电子标签的256位超低功耗EEPROM存储器.芯片实现了块编程和擦写功能,并通过优化敏感放大器和控制逻辑的结构,实现了读存储器时间和功耗的最优化.最后给出了芯片在编程/擦写/读操作情况下的功耗测试结果.在电源电压为1.8V,数据率为640kHz时,EEPROM编程/擦写的平均功耗约为68μA,读操作平均功耗约为0.6μA.
채용Chartered 0.35μm EEPROM공예설계병실현료일개괄용우무원사빈전자표첨적256위초저공모EEPROM존저기.심편실현료괴편정화찰사공능,병통과우화민감방대기화공제라집적결구,실현료독존저기시간화공모적최우화.최후급출료심편재편정/찰사/독조작정황하적공모측시결과.재전원전압위1.8V,수거솔위640kHz시,EEPROM편정/찰사적평균공모약위68μA,독조작평균공모약위0.6μA.
An ultra-low-power,256-bit EEPROM is designed and implemented in a Chartered 0.35μm EEPROM process. The read state power consumption is optimized using a new sense amplifier structure and an optimized control circuit. Block programming/erasing is achieved using an improved control circuit. An on silicon program/erase/read access time measurement design is given. For a power supply voltage of 1.8V,an average power consumption of 68 and 0.6μA for the program/erase and read operations,respectively,can be achieved at 640kHz.